INFORMATION
Performance Characteristics
Excellent AGC characteristic, when the input optical power range is -7～+2dBm, the output level, CTB and CSO basically unchanged.
Professional RF attenuator circuit, with good attenuation linear and high precision.
GaAs amplifier device, with good index, low distortion and high reliability.
The return path control adopts burst mode, which greatly reduced the noise collection.
The shell adopts aluminum die casting, the heat dissipation effect is good and the appearance is exquisite.
The power supply mode is external DC +12V.
Main Technical Performance
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1. Forward path
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Optical AGC control range: -7~+2 dBm
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C/N：≥ 51dB (Note1)
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Operating frequency: 45/87 ~ 862/1003MHz
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C/CTB：≥ 68dB (Note1)
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Flatness in band: ±0.75dB
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C/CSO：≥ 65dB (Note1)
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Rated output level: ≥ 92dBμV
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Maximum output level: ≥ 92dBμV
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2. Return path
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Output optical wavelength: 1310±10nm (or specified by the user)
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Output optical power: 1 mW (or specified by the user)
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Operating frequency: 5 ~ 65MHz (or specified by the user)
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Link flatness: ±1.5 dB
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Input level range: 75 ~ 85dBμV
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Input return loss: ≥16dB
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NPR dynamic range: ≥10dB (FP laser, NPR≥30 dB); ≥15dB (DFB laser, NPR≥30 dB)
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Note1: The test conditions refer to GB/T 143-2000.
General Performance
Operatingtemperature: -20 ~ +55℃. Operating voltage: DC +12V.
Consumption: ≤ 6W. Dimension: 155mm(L)×116mm(W)×26mm(H).
Ordering information
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